.. SOI offers unique advantages for mixed mode high voltage/high frequency circuits … 6 Circuit Design -Block Diagram C 2 R 2 g m-A v 1 Low voltage transconductance amplifier High-voltage amplifier … A High-Speed Monolithic Amplifier for CRT Drivers in SOI Alok Govil, Remus Albu, Ted Letavic, John Petruzzello, Mark Simpson, Satyen Mukherjee Philips Research USA Briarcliff Manor, NY alok.govil@philips.com 3 CRT Driver Requirements•Output voltage determines the intensity of the pixels on the screen•Three high-voltage wideband linear …

CRT Amps Technologies •High voltage/ high frequency technologies are required: -Junction isolated bipolar (Nat Semi, ST) -SOI w. thick Si layer, double diffused lateral MOS and bipolar (Philips, ST) •Our solution: Thin silicon layer SOI with novel lateral high voltage devices. SOI Characteristics •SOI offers unique advantages for mixed mode high voltage/high frequency circuits integration* -Excellent dielectric isolation through SiO 2 layers -Low junction capacitance -Low thermal device coupling -Multi-dimensional depletion (RESURF) transistor design results in very small electrical parasitics -Best-in-class BV DS -R SP figure -of-merit -Complementary power devices independently optimized for source-follower circuit operation Circuit Design -Block Diagram C 2 R 2 g m -A v 1 Low voltage transconductance amplifier High-voltage amplifier High-voltage output class AB buffer Input: 1V to 5V DC Gain = -g m R 2…. Comparison to state of the art Table: Figure of merit for various CRT drivers Max. Voltage m P 0 Circuit Family [V] [nJ] [W] National Semi LM24xx 80 17.2 0.28 ST Micro STV95xx 80 39.5 0.3 ST Micro TDA95xx 110 59.0 0.3 ST Micro STV95xx 110 52.5 0.3 ST Micro TDA95xxL 80 44.2 0.3 SOI CRT driver IC 120 12.4 0.3 •The following relationship between static power dissipation and transient time is assumed: where ‘m’ is a merit factor of the technology

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